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High Voltage
Power MOSFET
IXTH 6N120
IXTT 6N120
V DSS
I D25
R DS(on)
= 1200 V
= 6A
= 2.6 ?
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1200
1200
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
6
24
6
25
V
V
A
A
A
mJ
TO-268 (IXTT) Case Style
(TAB)
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
500
5
300
-55 ... +150
150
-55 ... +150
mJ
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
(TAB)
T L
1.6 mm (0.062 in.) from case for 10 s
300
° C
International standard packages
M d
Weight
Mounting torque
TO-247 AD
TO-268
1.13/10 Nm/lb.in.
6 g
4 g
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
Advantages
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
1200
V
Easy to mount
Space savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.5
5.0
± 100
25
500
V
nA
μ A
μ A
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
2.6
?
? 2004 IXYS All rights reserved
DS99024B(01/04)
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